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transistors
 
transistors Search:
 
MJ15003G
ON 10000
  • High Safe Operating Area (100% Tested) - 5.0 A @ 50 V
  • For Low Distortion Complementary Designs
  • High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc
  • Pb-Free Packages are Available
 09
MJ15004G
ON 10000
  • High Safe Operating Area (100% Tested) - 5.0 A @ 50 V
  • For Low Distortion Complementary Designs
  • High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc
  • Pb-Free Packages are Available
 09
MJ15011G
ON 10000
  • High Safe Operating Area (100% Tested)
    1.2 A @ 100 V
  • Completely Characterized for Linear Operation
  • High DC Current Gain and Low Saturation Voltage
    hFE = 20 (Min) @ 2 A, 2 V
    VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
  • For Low Distortion Complementary Designs
 09
MJ15015G
ON 10000
  • Current-Gain - Bandwidth-Product @ IC = 1.0 Adc
    fT = 0.8 MHz (Min) - NPN
    fT = 2.2 MHz (Min) - PNP
  • Safe Operating Area - Rated to 60 V and 120 V, Respectively
  • Pb-Free Packages are Available
 09
MJ15016G
ON 10000
  • Current-Gain - Bandwidth-Product @ IC = 1.0 Adc
    fT = 0.8 MHz (Min) - NPN
    fT = 2.2 MHz (Min) - PNP
  • Safe Operating Area - Rated to 60 V and 120 V, Respectively
  • Pb-Free Packages are Available
 09
MJ15022G
ON 10000
  • High Safe Operating Area (100% Tested) -
    2 A @ 80 V
  • High DC Current Gain -
    hFE = 15 (Min) @ IC = 8 Adc
  • Pb-Free Packages are Available
 09
MJ15023G
ON 5000

  • High Safe Operating Area (100% Tested) -
    2 A @ 80 V
  • High DC Current Gain -
    hFE = 15 (Min) @ IC = 8 Adc
  • Pb-Free Packages are Available

 09
MJ15024G
ON 5000
  • High Safe Operating Area (100% Tested) -
    2 A @ 80 V
  • High DC Current Gain -
    hFE = 15 (Min) @ IC = 8 Adc
  • Pb-Free Packages are Available
 09
MJ15025G
ON 5000
  • High Safe Operating Area (100% Tested) -
    2 A @ 80 V
  • High DC Current Gain -
    hFE = 15 (Min) @ IC = 8 Adc
  • Pb-Free Packages are Available
 09
MJ21193G
ON 5000
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.5 A, 80 V, 1 Second
  • Pb-Free Packages are Available
 09
MJ21194G
ON 5000
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.5 A, 80 V, 1 Second
  • Pb-Free Packages are Available
 09
MJ21195G
ON 5000
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available
 09
MJ21196G
ON 5000
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available
 09
MJD243G
ON 5000
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
 09
MJD243T4
ON 5000
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
 09
MJD243T4G
ON 5000
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
 09
MJD253-1G
ON 5000
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
 09
MJD253T4G
ON 5000
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
 09
MJD44H11-1G
ON 5000
  • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
  • Electrically Similar to Popular D44H/D45H Series
  • Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available
 09
MJD44H11G
ON 5000
  • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
  • Electrically Similar to Popular D44H/D45H Series
  • Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available
 09
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